First post, by sander
Hi everyone,
I'm currently in the process of reverse-engineering the Compaq LTE Expanded Memory module. Originally, I was working off pictures of a 2MB module currently for sale on eBay. However, thanks to Jesse (@i80386sx), I now have detailed, high-resolution pictures of the LTE/286 4MB memory module!
Because of this, I am almost done mapping out the full schematic.
What I Know So Far:
- Signals: 4 RAS lines and 2 CAS lines
- Addressing: 10 address lines are utilized.
- Capacity: In theory, the architecture should support up to 8MB.
Current Questions:
- Configuration Resistors: How exactly do the configuration resistor "jumpers" work on these modules for size detection?
- LTE Compatibility: Will this module also work on the regular, LTE (8088 model), or is it strictly for the LTE/286?
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RAM Compatibility: Currently RAM with 512/1024 Refresh Cycles is used, can I use a higher refresh cycle?
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Banks: How many banks are used? Is it 8 x 4 bit (8 banks) or do I have to use 4 x 8 bit (4 banks).
I will keep posting my progress here on VOGONS as I go. I'm also committing all my schematics, board files, and findings to GitHub if you want to follow along or contribute.
Cheers!